053-4202 rev d 6-2011 maximum ratings all ratings per leg: t c = 25c unless otherwise speci ? ed. product benefits low losses low noise switching cooler operation higher reliability systems increased system power density product features ultrafast recovery times soft recovery characteristics popular to-247 package low forward voltage low leakage current avalanche energy rated product applications anti-parallel diode -switchmode power supply -inverters free wheeling diode -motor controllers -converters -inverters snubber diode pfc ultrafast soft recovery rectifier diode 600v 2x30a apt30dq60bct APT30DQ60BCTG* *g denotes rohs compliant, pb free terminal finish. 1 - anode 1 2 - common cathode back of case - cathode 3 - anode 2 1 3 2 t o -2 4 7 1 2 3 (bct) static electrical characteristics symbol v f i rm c t unit volts a pf min typ max 2.0 2.4 2.4 1.7 25 500 36 characteristic / test conditions forward voltage maximum reverse leakage current junction capacitance, v r = 200v i f = 30a i f = 60a i f = 30a, t j = 125c v r = 600v v r = 600v, t j = 125c characteristic / test conditions maximum d.c. reverse voltage maximum peak repetitive reverse voltage maximum working peak reverse voltage maximum average forward current (t c = 117c, duty cycle = 0.5) rms forward current (square wave, 50% duty)non-repetitive forward surge current (t j = 45c, 8.3ms) avalanche energy (1a, 40mh) operating and storagetemperature range lead temperature for 10 sec. symbol v r v rrm v rwm i f(av) i f(rms) i fsm e avl t j ,t stg t l unit volts amps mj c apt30dq60bct(g) 600 3051 320 20 -55 to 175 300 microsemi website - http://www.microsemi.com downloaded from: http:///
053-4202 rev d 6-2011 apt30dq60bct(g) dynamic characteristics min typ max - 23 - 30 - 55 - 3 - - 175 - 485 - 6 - - 75 - 855 - 22 unit ns nc amps ns nc amps ns nc amps characteristic reverse recovery time reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current reverse recovery time reverse recovery charge maximum reverse recovery current symbol t rr t rr q rr i rrm t rr q rr i rrm t rr q rr i rrm test conditions i f = 30a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f = 30a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 30a, di f /dt = -1000a/ s v r = 400v, t c = 125 c i f = 1a, di f /dt = -100a/ s, v r = 30v, t j = 25 c thermal and mechanical characteristics characteristic / test conditions junction-to-case thermal resistance package weight maximum mounting torque symbol r jc w t torque min typ max .80 0.22 5.9 10 1.1 unit c/w oz g lbin nm z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1. maximum effective transient thermal impedance, junction-to-case vs. pulse duration 0.900.80 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: d = 0.9 microsemi reserves the right to change, without notice, the speci? cations and information contained herein. downloaded from: http:///
053-4202 rev d 6-2011 apt30dq60bct(g) typical performance curves t j = 125 c v r = 400v 15a 30a 60a t rr q rr q rr t rr i rrm 200180 160 140 120 100 8060 40 20 0 2520 15 10 50 duty cycle = 0.5 t j = 175 c 0 25 50 75 100 125 150 25 50 75 100 125 150 175 1 10 100 200 6050 40 30 20 10 0 1.21.0 0.8 0.6 0.4 0.2 0.0 200180 160 140 120 100 8060 40 20 0 c j , junction capacitance k f , dynamic parameters (pf) (normalized to 1000a/ s) i f(av) (a) t j , junction temperature ( c) case temperature ( c) figure 6. dynamic parameters vs. junction temperature figure 7. maximum average forward current vs. casetemperature v r , reverse voltage (v) figure 8. junction capacitance vs. reverse voltage 100 8060 40 20 0 12001000 800600 400 200 0 v f , anode-to-cathode voltage (v) -di f /dt, current rate of change(a/ s) figure 2. forward current vs. forward voltage figure 3. reverse recovery time vs. current rate of change -di f /dt, current rate of change (a/ s) -di f /dt, current rate of change (a/ s) figure 4. reverse recovery charge vs. current rate of change figure 5. reverse recovery current vs. current rate of change 0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 q rr , reverse recovery charge i f , forward current (nc) (a) i rrm , reverse recovery current t rr , reverse recovery time (a) (ns) t j = 175 c t j = -55 c t j = 25 c t j = 125 c t j = 125 c v r = 400v 60a 30a 15a t j = 125 c v r = 400v 60a 15a 30a downloaded from: http:///
apt30dq60bct(g) 053-4202 rev d 6-2011 apt30gt60br 4 3 1 2 5 zer o 0.25 i rr m pearson 2878 current transformer di f /dt adjus t 30h d.u.t. +18v 0v v r t rr / q rr waveform 15.49 (.610)16.26 (.640) 5.38 (.212 ) 6.20 (.244 ) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780 ) 20.32 (.800 ) 20.80 (.819 ) 21.46 (.845 ) 1.65 (.065 ) 2.13 (.084 ) 1.01 (.040 ) 1.40 (.055 ) 5.45 (.215) bsc 3.55 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185 ) 5.31 (.209 ) 1.49 (.059 ) 2.49 (.098 ) 2.21 (.087)2.59 (.102) 0.40 (.016) common cathode anode 2 anode 1 dimensions in millimeters and (inches) common cathode 2-plcs. 1.016 (.040) figure 10. diode reverse recovery waveform de? nition figure 9. diode test circuit i f - forward conduction current di f /dt - rate of diode current change through zero crossing. i rrm - maximum reverse recovery current t rr - reverse recovery time measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through i rrm and 0.25, i rrm passes through zero. q rr - area under the curve de ? ned by i rrm and t rr. 5 1 2 3 4 to-247 package outline e1 sac: tin, silver, copper downloaded from: http:///
|
